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VBE165R08S: The High-Performance Chinese-Designed Alternative to IPD65R650CE for Cost-Sensitive High-Voltage Applications

VBE165R08S: The High-Performance Chinese-Designed Alternative to IPD65R650CE for Cost-Sensitive High-Voltage Applications

VBE165R08S: The High-Performance Chinese-Designed Alternative to IPD65R650CE for Cost-Sensitive High-Voltage Applications

Jun 23, 2026
MOSFET application solutions
VBE19R07S: The High-Performance Chinese-Designed Alternative to STD6N95K5 for Robust High-Voltage Applications

VBE19R07S: The High-Performance Chinese-Designed Alternative to STD6N95K5 for Robust High-Voltage Applications

VBE19R07S: The High-Performance Chinese-Designed Alternative to STD6N95K5 for Robust High-Voltage Applications

Jun 23, 2026
MOSFET application solutions
VBE19R02S: A High-Voltage Chinese-Designed Alternative to STD3NK90ZT4 for Robust Power Switching

VBE19R02S: A High-Voltage Chinese-Designed Alternative to STD3NK90ZT4 for Robust Power Switching

VBE19R02S: A High-Voltage Chinese-Designed Alternative to STD3NK90ZT4 for Robust Power Switching

Jun 23, 2026
MOSFET application solutions
VBE19R02S: A High-Voltage, High-Reliability Chinese-Designed Alternative to STD2NK90ZT4 for Demanding Applications

VBE19R02S: A High-Voltage, High-Reliability Chinese-Designed Alternative to STD2NK90ZT4 for Demanding Applications

VBE19R02S: A High-Voltage, High-Reliability Chinese-Designed Alternative to STD2NK90ZT4 for Demanding Applications

Jun 23, 2026
MOSFET application solutions
VBE19R02S: A High-Voltage Chinese-Designed Alternative to STD2N95K5 for Robust Power Switching

VBE19R02S: A High-Voltage Chinese-Designed Alternative to STD2N95K5 for Robust Power Switching

VBE19R02S: A High-Voltage Chinese-Designed Alternative to STD2N95K5 for Robust Power Switching

Jun 23, 2026
MOSFET application solutions
VBE19R02S: A High-Performance Chinese-Designed Alternative to IPD95R2K0P7ATMA1 for LED Lighting and Low-Power Adapters

VBE19R02S: A High-Performance Chinese-Designed Alternative to IPD95R2K0P7ATMA1 for LED Lighting and Low-Power Adapters

VBE19R02S: A High-Performance Chinese-Designed Alternative to IPD95R2K0P7ATMA1 for LED Lighting and Low-Power Adapters

Jun 23, 2026
MOSFET application solutions
VBE18R11S: A High-Performance Chinese-Designed Alternative to STD80N240K6 for Robust High-Voltage Applications

VBE18R11S: A High-Performance Chinese-Designed Alternative to STD80N240K6 for Robust High-Voltage Applications

VBE18R11S: A High-Performance Chinese-Designed Alternative to STD80N240K6 for Robust High-Voltage Applications

Jun 23, 2026
MOSFET application solutions
VBE18R07S: A Superior Chinese-Designed Alternative to STD8N80K5 for High-Voltage Power Applications

VBE18R07S: A Superior Chinese-Designed Alternative to STD8N80K5 for High-Voltage Power Applications

VBE18R07S: A Superior Chinese-Designed Alternative to STD8N80K5 for High-Voltage Power Applications

Jun 23, 2026
MOSFET application solutions
VBE18R07S: A High-Performance Chinese-Designed Alternative to STD7N80K5 for Robust High-Voltage Applications

VBE18R07S: A High-Performance Chinese-Designed Alternative to STD7N80K5 for Robust High-Voltage Applications

VBE18R07S: A High-Performance Chinese-Designed Alternative to STD7N80K5 for Robust High-Voltage Applications

Jun 23, 2026
MOSFET application solutions
VBE18R05S: A High-Performance Chinese-Designed Alternative to IPD80R1K4CEATMA1 for Robust 800V Applications

VBE18R05S: A High-Performance Chinese-Designed Alternative to IPD80R1K4CEATMA1 for Robust 800V Applications

VBE18R05S: A High-Performance Chinese-Designed Alternative to IPD80R1K4CEATMA1 for Robust 800V Applications

Jun 23, 2026
MOSFET application solutions
VBE18R05S: A High-Performance Chinese-Designed Alternative to IPD80R1K0CE for Robust High-Voltage Applications

VBE18R05S: A High-Performance Chinese-Designed Alternative to IPD80R1K0CE for Robust High-Voltage Applications

VBE18R05S: A High-Performance Chinese-Designed Alternative to IPD80R1K0CE for Robust High-Voltage Applications

Jun 23, 2026
MOSFET application solutions
VBE18R02S: A High-Performance Chinese-Designed Alternative to STD4NK80ZT4 for Robust High-Voltage Switching Applications

VBE18R02S: A High-Performance Chinese-Designed Alternative to STD4NK80ZT4 for Robust High-Voltage Switching Applications

VBE18R02S: A High-Performance Chinese-Designed Alternative to STD4NK80ZT4 for Robust High-Voltage Switching Applications

Jun 23, 2026
MOSFET application solutions
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