VBP16R15S: A High-Performance Chinese-Designed Alternative to STW19NM60N for Demanding Automotive and Power Applications
VBP16R15S: A Superior Chinese-Designed Alternative to STW18NM60ND for High-Voltage Power Applications
VBP16R11S: A High-Performance Chinese-Designed Alternative to STW13N60M2 for Robust Power Switching Applications
VBP15R50S: A High-Performance Chinese-Designed Alternative to STW30NM50N for Demanding Power Applications
VBP15R50S: A High-Performance Chinese-Designed Alternative to STW19NM50N for Robust Power Switching Applications
VBP15R50S: A Superior Chinese-Designed Alternative to STW14NK50Z for Demanding High-Voltage Applications
VBP15R47S: A High-Performance Chinese-Designed Alternative to STW62NM60N for Demanding High-Voltage Applications
VBP15R30S: A High-Performance Chinese-Designed Alternative to STW32NM50N for Robust Power Switching Applications
VBP15R20S: A High-Performance Chinese-Designed Alternative to IRFP362 for Demanding High-Voltage Applications
VBP15R14S: A Superior Chinese-Designed Alternative to IRFP352 for Demanding High-Voltage Applications
VBP1151N: The Superior Chinese-Designed Power MOSFET for Replacing TI's IRFP243 in Demanding Applications
VBP1106: The Superior Chinese-Designed Power MOSFET for Replacing ST's STY140NS10 in Demanding Applications