VBMB17R07S: A Superior Chinese-Designed Alternative to STP10NK70ZFP for Robust High-Voltage Applications
VBMB16R32S: A High-Performance Chinese-Designed Alternative to STF42N60M2-EP for Robust Power Applications
VBMB16R26S: A High-Performance Chinese-Designed Alternative to STF33N60DM6 for Demanding Power Applications
VBMB16R20S: A High-Performance Chinese-Designed Alternative to STF28NM60ND for Robust Power Switching Applications
VBMB16R20S: A High-Performance Chinese-Designed Alternative to AOTF190A60L for Robust Power Switching Applications
VBMB16R18S: A High-Performance Chinese-Designed Alternative to STF25N60M2-EP for Robust High-Voltage Applications
VBMB16R18S: A High-Performance Chinese-Designed Alternative to STF24N60M6 for Robust Power Switching Applications
VBMB16R12S: A High-Performance Chinese-Designed Alternative to STFU18N65M2 for Robust Power Switching
VBMB16R12S: The Advanced Chinese-Designed Super-Junction MOSFET for Upgrading ST's STFU15NM65N in High-Voltage Applications
VBMB16R12S: A High-Performance Chinese-Designed Alternative to STFU8N60DM2 for Robust Power Switching Applications
VBMB16R12S: A High-Performance Chinese-Designed Alternative to STF16N60M6 for Robust Power Switching
VBMB16R12S: A High-Performance Chinese-Designed Alternative to STF16N60M2 for Robust Power Switching