RUF025N02-VB is a high-efficiency, low R_DS(on) N-channel MOSFET in SC70-3 package. This MOSFET adopts Trench technology, has extremely low on-resistance (R_DS(on)), and supports a maximum leakage current (I_D) of 4A. Its gate-source voltage (V_GS) can reach 12V, which can provide good conduction performance at a lower V_GS. This MOSFET is mainly used in low-voltage power systems, low-power applications, portable devices and small electronic modules that require efficient switching control.