FDG6303N-VB

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估计运输时间: 7 天
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VBsemi

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价格
$0.16 /pc
数量
(9999 可用)
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  • Product FDG6303N-VB
  • Package SC70-6
  • Polarity Dual-N+N
  • Technology Trench
  • VDS/VCE(V) 20V
  • VGS/VGE(±V) ±12V
  • ID/ICE (A) 0.5~1.5V
  • Vthtyp(V) 2.6A
  • RDS(2.5V) (mΩ) 110(mΩ)
  • RDS(4.5V) (mΩ) 86(mΩ)
  • RDS(10V) (mΩ) (mΩ)
  • 数量1---USD价格 0.1618
  • 数量10---USD价格 0.1483
  • 数量30---USD价格 0.1348
  • 数量100---USD价格 0.1146

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FDG6303N-VB is a dual N-channel field effect transistor (FET) suitable for a variety of electronic applications. Its key features include low threshold voltage and low on-resistance, enabling it to operate effectively under low voltage and low power conditions. Its SC70-6 package is suitable for space-constrained applications.

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