40N06-VB is a single N-channel MOSFET in TO252 package. It has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of 20V, a threshold voltage (Vth) of 1.7V, and a drain current (ID) of 45A. This MOSFET uses Trench technology, has low on-resistance and high current handling capability, and is suitable for applications requiring high-performance power switches.