40N06-VB TO252

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VBsemi

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$0.36 /pc
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(9999 可用)
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  • Product 40N06-VB TO252
  • Package TO252
  • Polarity Single-N
  • Technology Trench
  • VDS/VCE(V) 60V
  • VGS/VGE(±V) ±20V
  • ID/ICE (A) 1.7V
  • Vthtyp(V) 45A
  • RDS(4.5V) (mΩ) 30(mΩ)
  • RDS(10V) (mΩ) 25(mΩ)
  • 数量1---USD价格 0.364
  • 数量10---USD价格 0.3337
  • 数量30---USD价格 0.3034
  • 数量100---USD价格 0.2579

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40N06-VB is a single N-channel MOSFET in TO252 package. It has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of 20V, a threshold voltage (Vth) of 1.7V, and a drain current (ID) of 45A. This MOSFET uses Trench technology, has low on-resistance and high current handling capability, and is suitable for applications requiring high-performance power switches.

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