FDT434P-VB is a single-channel P-channel MOSFET in SOT223 package, designed for applications that require negative voltage operation. The device supports a drain-source voltage of up to -40V and can operate stably in a negative voltage environment. With its low on-resistance and advanced Trench technology, the FDT434P-VB is able to achieve efficient switching at a lower gate voltage. It is suitable for a variety of electronic applications that require high current switching and high voltage control, such as power management, load switching, and electric drive systems.