FDB3632-VB
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估计运输时间:
7 天
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价格
$1.42
/pc
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Not Applicable
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畅销产品
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$0.07 -
$0.53
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$0.36
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$0.34
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$0.32
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$0.07
- Product FDB3632-VB
- Package TO263
- Polarity Single-N
- Technology Trench
- VDS/VCE(V) 100V
- VGS/VGE(±V) ±20V
-
ID/ICE (A) 3V - Vthtyp(V) 140A
- RDS(10V) (mΩ) 4(mΩ)
- 数量1---USD价格 1.4157
- 数量10---USD价格 1.2977
- 数量30---USD价格 1.1797
- 数量100---USD价格 1.0028
FDB3632-VB is a high-performance N-channel power MOSFET packaged in TO263. It uses Trench technology to provide a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of up to 140A. At a gate voltage of 10V, its on-resistance (RDS(ON)) is 4mΩ. FDB3632-VB is designed for applications requiring high current and low on-resistance, and is particularly suitable for high-efficiency switching and power management systems.Frequently Bought Products
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畅销产品-
$0.07
-
$0.53
-
$0.36
-
$0.34
-
$0.32
-
$0.07
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