This MOSFET has a drain-source voltage (V_DS) of 20V and a maximum leakage current of 6A. Its on-resistance (R_DS(ON)) is very low, at 28mΩ at V_GS=4.5V, which can effectively reduce power loss and provide higher efficiency. The turn-on voltage (V_th) of this model is 0.5~1.5V, which is suitable for low-voltage, high-frequency switching applications, especially for low-power power management, load switching, signal switching and other fields. While providing high performance, the TSM2314CX RF-VB can effectively reduce heat loss and ensure that the system works stably in a high-efficiency state.