SPP80P06P H-VB is a high-performance single P-channel MOSFET in TO220 package and Trench technology, designed for high-efficiency power switching applications. Its maximum drain-source voltage (VDS) is -60V, maximum gate-source voltage (VGS) is ±20V, threshold voltage (Vth) is -1.7V, and has extremely low on-resistance (RDS(ON) is only 26mΩ @ VGS = 4.5V and 19mΩ @ VGS = 10V). SPP80P06P H-VB supports a maximum drain current (ID) of up to -50A, which is very suitable for high-current, high-power applications in load switches and power management systems. It can provide high-efficiency, low-loss solutions for power conversion, switch mode power supplies (SMPS) and battery management.