HM2301KR-VB is a high-performance P-type power MOSFET in SC70-3 package, designed for low-voltage applications. The drain-source voltage (VDS) of this MOSFET is -20V, which is suitable for scenarios requiring negative voltage switching. Its gate-source voltage (VGS) range is ±12V, and the threshold voltage (Vth) is -0.6V. It has a low on-resistance of 100mΩ @ VGS = 2.5V and 80mΩ @ VGS = 4.5V, and supports a maximum drain current (ID) of -3.1A. Using Trench technology, this MOSFET provides excellent switching performance and efficient power management, suitable for a variety of low-voltage circuit applications.