SI2309DS-T1-GE3-VB
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7 天
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$0.20
/pc
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Not Applicable
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- Product SI2309DS-T1-GE3-VB
- Package SOT23-3
- Polarity Single-P
- Technology Trench
- VDS/VCE(V) -60V
- VGS/VGE(±V) ±20V
-
ID/ICE (A) -1.7V - Vthtyp(V) -5.2A
- RDS(4.5V) (mΩ) 52(mΩ)
- RDS(10V) (mΩ) 50(mΩ)
- 数量1---USD价格 0.2022
- 数量10---USD价格 0.1854
- 数量30---USD价格 0.1685
- 数量100---USD价格 0.1433
SI2309DS-T1-GE3-VB is a P-channel power MOSFET suitable for applications in various fields. It has high rated voltage and rated current, and can provide reliable power amplification and switch control. Its low on-resistance can provide lower power consumption at low voltage while maintaining low temperature rise.Frequently Bought Products
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畅销产品-
$0.07
-
$0.53
-
$0.36
-
$0.34
-
$0.32
-
$0.07
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