SI2309DS-T1-GE3-VB
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估计运输时间:
7 天
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价格
$0.20
/pc
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Not Applicable
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- Product SI2309DS-T1-GE3-VB
- Package SOT23-3
- Polarity Single-P
- Technology Trench
- VDS/VCE(V) -60V
- VGS/VGE(±V) ±20V
-
ID/ICE (A) -1.7V - Vthtyp(V) -5.2A
- RDS(4.5V) (mΩ) 52(mΩ)
- RDS(10V) (mΩ) 50(mΩ)
- Quantity 1 --- USD Price 0.20
- Quantity 10 --- USD Price 0.19
- Quantity 30 --- USD Price 0.17
- Quantity 100 --- USD Price 0.14
SI2309DS-T1-GE3-VB is a P-channel power MOSFET suitable for applications in various fields. It has high rated voltage and rated current, and can provide reliable power amplification and switch control. Its low on-resistance can provide lower power consumption at low voltage while maintaining low temperature rise.Frequently Bought Products
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畅销产品-
$0.20
-
$0.07
-
$0.53
-
$0.36
-
$0.34
-
$0.23
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