NTD5806NT4G-VB

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VBsemi

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价格
$0.36 /pc
数量
(9999 可用)
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畅销产品
  • Product NTD5806NT4G-VB
  • Package TO252
  • Polarity Single-N
  • Technology Trench
  • VDS/VCE(V) 40V
  • VGS/VGE(±V) ±20V
  • ID/ICE (A) 2.5V
  • Vthtyp(V) 55A
  • RDS(4.5V) (mΩ) 14(mΩ)
  • RDS(10V) (mΩ) 12(mΩ)
  • 数量1---USD价格 0.364
  • 数量10---USD价格 0.3337
  • 数量30---USD价格 0.3034
  • 数量100---USD价格 0.2579

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The NTD5806NT4G is an N-channel MOSFET designed for applications with high current requirements. Its extremely low on-resistance (RDS(ON)) enables it to excel in high-power applications, reducing energy loss and heat generation. Commonly used in power management, DC-DC converters, and other circuits that require efficient power conversion, such as motor drive, power amplification, and other fields. Advantages: Extremely low on-resistance: The NTD5806NT4G has excellent conduction characteristics, which reduces conduction losses and heat generation, and improves efficiency. Reliability: As a well-known semiconductor brand, VBsemi's products undergo strict quality control and have high reliability and stability. Suitable for high-power applications: Its high current and low on-resistance characteristics enable it to excel in high-power applications, such as motor drive and power amplification.

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