Si2338DS-T1-GE3-VB
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7 天
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- Product Si2338DS-T1-GE3-VB
- Package SOT23-3
- Polarity Single-N
- Technology Trench
- VDS/VCE(V) 30V
- VGS/VGE(±V) ±20V
-
ID/ICE (A) 1.7V - Vthtyp(V) 6.5A
- RDS(4.5V) (mΩ) 33(mΩ)
- RDS(10V) (mΩ) 30(mΩ)
- 数量1---USD价格 0.0728
- 数量10---USD价格 0.0667
- 数量30---USD价格 0.0607
- 数量100---USD价格 0.0516
The following is a detailed parameter description and application introduction: Si2338DS-T1-GE3 is an N-channel power MOSFET suitable for applications requiring high current carrying capacity and low on-resistance such as inductive loads, switching power supplies, and DC-DC converters.Frequently Bought Products
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畅销产品-
$0.07
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$0.53
-
$0.36
-
$0.34
-
$0.32
-
$0.07
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