SI1967DH-T1-GE3-VB
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7 天
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$0.16
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- Product SI1967DH-T1-GE3-VB
- Package SC70-6
- Polarity Dual-P+P
- Technology Trench
- VDS/VCE(V) -20V
- VGS/VGE(±V) ±12V
-
ID/ICE (A) -0.6V - Vthtyp(V) -1.8A
- RDS(2.5V) (mΩ) 235（mΩ）
- RDS(4.5V) (mΩ) 155(mΩ)
- RDS(10V) (mΩ) (mΩ)
- 数量1---USD价格 0.1618
- 数量10---USD价格 0.1483
- 数量30---USD价格 0.1348
- 数量100---USD价格 0.1146
SI1967DH-T1-GE3 is a dual P-channel MOSFET with negative rated voltage and rated current, suitable for use in various power management and power amplifier applications. It has moderate on-resistance and high performance characteristics, which can provide reliable and efficient current switching function.Frequently Bought Products
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畅销产品-
$0.07
-
$0.53
-
$0.36
-
$0.34
-
$0.32
-
$0.07
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