SI3443DV-T1-GE3-VB
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7 天
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$0.16
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- Product SI3443DV-T1-GE3-VB
- Package SOT23-6
- Polarity Single-P
- Technology Trench
- VDS/VCE(V) -30V
- VGS/VGE(±V) ±20V
-
ID/ICE (A) -1.7V - Vthtyp(V) -4.8A
- RDS(4.5V) (mΩ) 54(mΩ)
- RDS(10V) (mΩ) 49(mΩ)
- 数量1---USD价格 0.1618
- 数量10---USD价格 0.1483
- 数量30---USD价格 0.1348
- 数量100---USD价格 0.1146
SI3443DV-T1-GE3-VB is a unipolar P-channel MOSFET produced by **Vishay**, using **SOT23-6** package, designed for high-efficiency power management and load switching applications. Its drain-source voltage (V_DS) is rated at -30V, the gate-source voltage (V_GS) is ±20V, and the gate threshold voltage (V_th) is -1.7V, which is suitable for a variety of low-voltage, high-efficiency circuits.Frequently Bought Products
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畅销产品-
$0.07
-
$0.53
-
$0.36
-
$0.34
-
$0.32
-
$0.07
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