SI3456DDV-T1-GE3-VB
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7 天
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- Product SI3456DDV-T1-GE3-VB
- Package SOT23-6
- Polarity Single-N
- Technology Trench
- VDS/VCE(V) 30V
- VGS/VGE(±V) ±20V
-
ID/ICE (A) 1.7V - Vthtyp(V) 6A
- RDS(4.5V) (mΩ) 27(mΩ)
- RDS(10V) (mΩ) 26(mΩ)
- 数量1---USD价格 0.1618
- 数量10---USD价格 0.1483
- 数量30---USD价格 0.1348
- 数量100---USD价格 0.1146
SI3456DDV-T1-GE3-VB is an N-channel MOSFET with low drain-source resistance (RDS(ON)), high rated current and moderate voltage rating, suitable for power switching and amplifier applications in various electronic devices and modules. The performance parameters of this MOSFET make it suitable for a variety of fields.Frequently Bought Products
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畅销产品-
$0.07
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$0.53
-
$0.36
-
$0.34
-
$0.32
-
$0.07
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