SI4539DY-T1-E3-VB
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估计运输时间:
7 天
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价格
$0.28
/pc
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Not Applicable
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- Product SI4539DY-T1-E3-VB
- Package SOP-8
- Polarity Dual-N+P
- Technology Trench
- VDS/VCE(V) ±30V
- VGS/VGE(±V) ±20V
-
ID/ICE (A) 1.6/-1.7V - Vthtyp(V) ±8A
- RDS(4.5V) (mΩ) 24/50(mΩ)
- RDS(10V) (mΩ) 18/40(mΩ)
- 数量1---USD价格 0.2831
- 数量10---USD价格 0.2595
- 数量30---USD价格 0.2359
- 数量100---USD价格 0.2006
SI4539DY-T1-E3-VB is an N+P channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device produced by VBsemi with a dual channel structure suitable for a variety of power switching and control applications. The device has a low static drain-source resistance (RDS(ON)) and a moderate current handling capability, suitable for high-performance electronic circuits.Frequently Bought Products
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畅销产品-
$0.07
-
$0.53
-
$0.36
-
$0.34
-
$0.32
-
$0.07
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