IRFS4020PBF-VB is a high voltage N-channel MOSFET manufactured with advanced Trench technology and designed for high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 200V, the maximum gate-source voltage (VGS) is ±20V, and the maximum drain current (ID) is 40A. At VGS=10V, its on-resistance (RDS(ON)) is 48mΩ, and the package is TO263. IRFS4020PBF-VB provides excellent switching performance and efficient power management, and is suitable for various electronic applications requiring high voltage and high current.