SI7478DP-T1-GE3-VB

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VBsemi

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$1.01 /pc
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(9999 可用)
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  • Product SI7478DP-T1-GE3-VB
  • Package DFN8(5X6)
  • Polarity Single-N
  • Technology Trench
  • VDS/VCE(V) 60V
  • VGS/VGE(±V) ±20V
  • ID/ICE (A) 2.5V
  • Vthtyp(V) 80A
  • RDS(4.5V) (mΩ) 7(mΩ)
  • RDS(10V) (mΩ) 6(mΩ)
  • 数量1---USD价格 1.0112
  • 数量10---USD价格 0.9269
  • 数量30---USD价格 0.8427
  • 数量100---USD价格 0.7163

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SI7478DP-T1-GE3-VB is an N-channel power MOSFET with high voltage and high current capabilities, as well as low on-resistance. This makes it very useful in a variety of high-power and high-voltage applications.

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