SI3430DV-T1-GE3-VB

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估计运输时间: 7 天
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VBsemi

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$0.18 /pc
数量
(9999 可用)
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  • Product SI3430DV-T1-GE3-VB
  • Package SOT23-6
  • Polarity Single-N
  • Technology Trench
  • VDS/VCE(V) 100V
  • VGS/VGE(±V) ±20V
  • ID/ICE (A) 1.8V
  • Vthtyp(V) 3.2A
  • RDS(4.5V) (mΩ) 105(mΩ)
  • RDS(10V) (mΩ) 95(mΩ)
  • 数量1---USD价格 0.182
  • 数量10---USD价格 0.1668
  • 数量30---USD价格 0.1517
  • 数量100---USD价格 0.1289

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This MOSFET is suitable for a wide range of applications such as power conversion, DC-DC converters, electric drive systems and battery management. Due to its high performance and low power consumption, the SI3430DV-T1-GE3-VB is an ideal switching element in modern low-voltage and medium-voltage electronic devices.

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