SIR802DP-T1-GE3-VB

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估计运输时间: 7 天
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VBsemi

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$0.81 /pc
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(9999 可用)
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  • Product SIR802DP-T1-GE3-VB
  • Package DFN8(5X6)
  • Polarity Single-N
  • Technology Trench
  • VDS/VCE(V) 30V
  • VGS/VGE(±V) ±20V
  • ID/ICE (A) 1.7V
  • Vthtyp(V) 160A
  • RDS(4.5V) (mΩ) 2.5(mΩ)
  • RDS(10V) (mΩ) 1.8(mΩ)
  • 数量1---USD价格 0.809
  • 数量10---USD价格 0.7415
  • 数量30---USD价格 0.6741
  • 数量100---USD价格 0.573

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SIR802DP-T1-GE3-VB is a high-performance N-channel MOSFET suitable for electronic devices and circuits that require high current and low on-resistance. It has a wide range of applications in modules in some specific fields.

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