RYU002N05T306-VB

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估计运输时间: 7 天
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VBsemi

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$0.06 /pc
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(9999 可用)
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  • Product RYU002N05T306-VB
  • Package SC70-3
  • Polarity Single-N
  • Technology Trench
  • VDS/VCE(V) 60V
  • VGS/VGE(±V) ±20V
  • ID/ICE (A) 1.7V
  • Vthtyp(V) 0.3A
  • RDS(4.5V) (mΩ) 4000(mΩ)
  • RDS(10V) (mΩ) 2000(mΩ)
  • 数量1---USD价格 0.0647
  • 数量10---USD价格 0.0593
  • 数量30---USD价格 0.0539
  • 数量100---USD价格 0.0458

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These are some examples of application field modules that may use the RYU002N05T306-VB N-channel low-power MOSFET. The parameters of this device make it suitable for applications that require low-power power switching and power management, especially where low static power consumption is required. In actual applications, be sure to comply with the electrical specifications and operating conditions in the data sheet to ensure optimal performance and reliability.

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