SI2312DS-T1-GE3-VB

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VBsemi

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  • Product SI2312DS-T1-GE3-VB
  • Package SOT23-3
  • Polarity Single-N
  • Technology Trench
  • VDS/VCE(V) 20V
  • VGS/VGE(±V) ±12V
  • ID/ICE (A) 0.5~1.5V
  • Vthtyp(V) 6A
  • RDS(2.5V) (mΩ) 42(mΩ)
  • RDS(4.5V) (mΩ) 28(mΩ)
  • RDS(10V) (mΩ) (mΩ)
  • Quantity 1 --- USD Price 0.05
  • Quantity 10 --- USD Price 0.04
  • Quantity 30 --- USD Price 0.04
  • Quantity 100 --- USD Price 0.03

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VB1240 Brand: VBsemi Application Introduction: N-channel MOSFET is widely used in various fields.This N-channel MOSFET is suitable for low voltage and low power applications and is often used in portable electronic devices and small electronic circuits to provide efficient current control and power management.

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