SIS436DN-T1-GE3-VB is a single N-channel MOSFET in a small DFN8 (3x3mm) package, designed for high-efficiency and low-voltage applications. It has a maximum drain-source voltage of 30V and a maximum drain current of up to 30A, suitable for high-efficiency power switching applications. This MOSFET uses Trench technology and has a low on-resistance (RDS(ON)) of 19mΩ and 13mΩ respectively, which greatly reduces power loss during switching, thereby improving system efficiency. The product has a threshold voltage of 1.7V, which is suitable for low gate-source voltage drive systems and is widely used in low-power electronic devices and power management modules.