SI2301DS-T1-GE3-VB
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- Product SI2301DS-T1-GE3-VB
- Package SOT23-3
- Polarity Single-P
- Technology Trench
- VDS/VCE(V) -20V
- VGS/VGE(±V) ±12V
-
ID/ICE (A) -0.8V - Vthtyp(V) -4A
- RDS(2.5V) (mΩ) 80（mΩ）
- RDS(4.5V) (mΩ) 65(mΩ)
- RDS(10V) (mΩ) 60(mΩ)
- 数量1---USD价格 0.0485
- 数量10---USD价格 0.0445
- 数量30---USD价格 0.0404
- 数量100---USD价格 0.0344
SI2301DS-T1-GE3 (VB2290) is a P-channel MOSFET suitable for applications that require current control. Its low on-resistance makes it perform well in current control circuits. Commonly used in power switches, charge control, power amplification, etc. Advantages: Low on-resistance: Reduce power consumption and improve efficiency. Reliability: As a well-known semiconductor brand, VBsemi's products are strictly quality controlled and have high reliability.Frequently Bought Products
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畅销产品-
$0.07
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$0.53
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$0.36
-
$0.34
-
$0.32
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$0.07
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