SI3477DV-T1-GE3-VB
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7 天
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$0.16
/pc
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Not Applicable
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$0.07 -
$0.53
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$0.36
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$0.34
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$0.32
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- Product SI3477DV-T1-GE3-VB
- Package SOT23-6
- Polarity Single-P
- Technology Trench
- VDS/VCE(V) -30V
- VGS/VGE(±V) ±20V
-
ID/ICE (A) -1.7V - Vthtyp(V) -4.8A
- RDS(4.5V) (mΩ) 54(mΩ)
- RDS(10V) (mΩ) 49(mΩ)
- 数量1---USD价格 0.1618
- 数量10---USD价格 0.1483
- 数量30---USD价格 0.1348
- 数量100---USD价格 0.1146
SI3477DV-T1-GE3 is a P-channel power MOSFET suitable for circuits with low voltage and low power consumption. The main parameters include rated voltage of -30V, rated current of -4.8A, RDS(ON) of 49mΩ @ 10V, 54mΩ @ 4.5V, gate-source voltage range of ±±20V, gate-source threshold voltage range of -1V~-3V, and package type of SOT23-6.Frequently Bought Products
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畅销产品-
$0.07
-
$0.53
-
$0.36
-
$0.34
-
$0.32
-
$0.07
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