BUK762R4-60E-VB is a high-performance single N-channel MOSFET in a TO263 package. The device has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. Its on-resistance (RDS(ON)) is 7mΩ at a VGS of 4.5V and 2.5mΩ at a VGS of 10V, and supports a continuous drain current (ID) of up to 270A. BUK762R4-60E-VB uses advanced Trench technology, with extremely low conduction losses and excellent switching performance, and is suitable for various application scenarios requiring high current and high efficiency.