SI7850DP-T1-E3-VB

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VBsemi

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$0.53 /pc
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(9999 可用)
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  • Product SI7850DP-T1-E3-VB
  • Package DFN8(5X6)
  • Polarity Single-N
  • Technology Trench
  • VDS/VCE(V) 60V
  • VGS/VGE(±V) ±20V
  • ID/ICE (A) 1.7V
  • Vthtyp(V) 15A
  • RDS(4.5V) (mΩ) 28(mΩ)
  • RDS(10V) (mΩ) 24(mΩ)
  • 数量1---USD价格 0.5258
  • 数量10---USD价格 0.482
  • 数量30---USD价格 0.4382
  • 数量100---USD价格 0.3725

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1. **Package Type:** DFN8(5X6), indicating that the device uses DFN8(5X6) package with a size of 5mm x 6mm. 2. **Channel Type:** N-Channel, indicating that this is an N-channel MOSFET. 3. **Rated Voltage:** 60V, indicating the maximum voltage at which the device can work normally. 4. **Maximum Current:** 45A, indicating the maximum current that the device can withstand. 5. **On-State Resistance:** RDS(ON) = 24mΩ @ VGS=10V, --VGS=±20V, indicating the resistance in the on state under a specific gate-source voltage. 6. **Threshold Voltage:** Vth = 1~3V, which means the voltage range required for the device to switch from the off state to the on state under the action of the gate-source voltage.

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