IRFU420PBF-VB

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VBsemi

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$0.40 /pc
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(9999 可用)
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畅销产品
  • Product IRFU420PBF-VB
  • Package TO251
  • Polarity Single-N
  • Technology Plannar
  • VDS/VCE(V) 650V
  • VGS/VGE(±V) ±30V
  • ID/ICE (A) 3.5V
  • Vthtyp(V) 4A
  • RDS(10V) (mΩ) 2200(mΩ)
  • 数量1---USD价格 0.4045
  • 数量10---USD价格 0.3708
  • 数量30---USD价格 0.3371
  • 数量100---USD价格 0.2865

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this is an N-Channel MOSFET in TO251 package, designed based on Plannar technology, optimized for high voltage applications. With a maximum drain-source voltage (VDS) of 650V and a maximum drain current of 4A, this MOSFET is suitable for high voltage power switching and control applications. IRFU420PBF-VB has a higher threshold voltage and on-resistance, making it suitable for use in scenarios that require high voltage handling and lower current.

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