IRF9640S-VB is a high voltage P-channel MOSFET in TO263 package, designed for high voltage and high power applications. The drain-source voltage (VDS) of this MOSFET can withstand up to -200V, the gate-source voltage (VGS) range is ±20V, and the gate threshold voltage is -3.5V. Its on-resistance is 600mΩ at a gate voltage of 4.5V and 500mΩ at 10V. The maximum drain current is -11A, which is suitable for high voltage and high current circuits. IRF9640S-VB uses Trench technology to reduce on-resistance and improve switching efficiency, thereby improving overall performance.