SI6435ADQ-T1-GE3-VB

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VBsemi

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$0.73 /pc
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(9999 可用)
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  • Product SI6435ADQ-T1-GE3-VB
  • Package TSSOP8
  • Polarity Single-P
  • Technology Trench
  • VDS/VCE(V) -30V
  • VGS/VGE(±V) ±20V
  • ID/ICE (A) -1.7V
  • Vthtyp(V) -9A
  • RDS(4.5V) (mΩ) 20(mΩ)
  • RDS(10V) (mΩ) 16(mΩ)
  • 数量1---USD价格 0.7281
  • 数量10---USD价格 0.6674
  • 数量30---USD价格 0.6067
  • 数量100---USD价格 0.5157

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SI6435ADQ-T1-GE3 is a single P-channel MOSFET produced by Vishay, using TSSOP8 package, designed for low voltage, high efficiency power management and switching applications. This MOSFET has low on-resistance (RDS(ON)) and excellent switching performance, which enables it to have lower power loss in the power system and help improve the efficiency of the overall system. SI6435ADQ-T1-GE3 has a VDS of -30V and a VGS of ±20V, which is suitable for medium power applications, especially for battery-powered portable devices and low-power power systems.

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