**IPB80N06S2L-07-VB** is a high-performance N-Channel MOSFET in TO263 package based on Trench technology. This MOSFET is designed for high-efficiency switching applications and can withstand a maximum drain-source voltage (VDS) of 60V and a continuous current (ID) of 150A. Its on-resistance (RDS(ON)) is as low as 4mΩ at VGS=10V, which can reduce conduction losses and improve energy conversion efficiency. It is very suitable for use in high-current, high-efficiency power management and switching circuits.