NTD3055L104-1G-VB

畅销产品

AO3401A-VB

$0.07
FDMC2514SDC-VB

$0.53
IRL3103PBF-VB

$0.36
TPC8028-VB

$0.34
FDT86113LZ-VB

$0.32
CJ3401-VB

$0.07

Product NTD3055L104-1G-VB

Package TO251

Polarity Single-N

Technology Trench

VDS/VCE(V) 60V

VGS/VGE(±V) ±20V

ID/ICE (A) 1.8V

Vthtyp(V) 40A

RDS(10V) (mΩ) 35(mΩ)

数量1---USD价格 0.3236

数量10---USD价格 0.2966

数量30---USD价格 0.2697

数量100---USD价格 0.2292

Reviews & Ratings

0 out of 5.0

(0 评论)

Rate this Product

该产品还没有评论。

描述

this is an N-Channel MOSFET in TO251 package, designed based on Plannar technology, optimized for high voltage applications. With a maximum drain-source voltage (VDS) of 650V and a maximum drain current of 4A, this MOSFET is suitable for high voltage power switching and control applications. IRFU420PBF-VB has a higher threshold voltage and on-resistance, making it suitable for use in scenarios that require high voltage handling and lower current.

下载

Frequently Bought Products

Product Queries (0)

登录或者 Registerto submit your questions to seller