The STB60NF06LT4-VB is a single N-channel MOSFET in a TO263 package, designed for high current and high efficiency applications. With a maximum drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 75A, this MOSFET is suitable for power conversion and electric drive systems that require high switching frequency and low on-resistance. The STB60NF06LT4-VB uses Trench technology to provide extremely low on-resistance (RDS(ON) = 12mΩ @ VGS = 4.5V, RDS(ON) = 11mΩ @ VGS = 10V), significantly reducing power loss and improving system efficiency. It is widely used in power management, power transmission, and high-efficiency power conversion, and is an ideal switching element in high-performance devices.