SI3911DV-T1-GE3-VB
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7 天
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$0.16
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- Product SI3911DV-T1-GE3-VB
- Package SOT23-6
- Polarity Dual-P+P
- Technology Trench
- VDS/VCE(V) -20V
- VGS/VGE(±V) ±12V
-
ID/ICE (A) -0.6V - Vthtyp(V) -4A
- RDS(2.5V) (mΩ) 100（mΩ）
- RDS(4.5V) (mΩ) 75(mΩ)
- RDS(10V) (mΩ) (mΩ)
- 数量1---USD价格 0.1618
- 数量10---USD价格 0.1483
- 数量30---USD价格 0.1348
- 数量100---USD价格 0.1146
SI3911DV-T1-GE3 is a device with two P-channel MOSFETs, suitable for applications that need to control multiple P-channel MOSFETs simultaneously. Its maximum withstand voltage is -20V, maximum current is -4A, with low on-resistance and high performance.Frequently Bought Products
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畅销产品-
$0.07
-
$0.53
-
$0.36
-
$0.34
-
$0.32
-
$0.07
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