IRF630NS-VB is a unipolar N-type MOSFET based on trench technology, designed to handle high voltage and medium current loads. It is packaged in a TO263 package with a VDS voltage of **200V**, a VGS tolerance of **±20V**, and a threshold voltage (Vth) of **3V**. The MOSFET has an RDS(ON) of 300mΩ** at **VGS=10V** and supports a continuous leakage current of **10A**. The trench technology gives it a lower on-resistance, making it suitable for power switching applications.