**SQS401EN-T1-GE3-VB** is a unipolar P-channel MOSFET in a DFN8 (3x3) package with a withstand voltage of **-40V** and a maximum drain current of **-45A**. Its on-resistance is **13mΩ** (@ VGS = 4.5V) and **12mΩ** (@ VGS = 10V), indicating that it has very low conduction losses and is suitable for high-efficiency power management applications. This MOSFET uses **Trench** technology to provide excellent switching characteristics and low RDS(ON), enabling it to perform well in scenarios requiring high efficiency and stability, and is particularly suitable for power conversion and power control systems with low voltage and high current loads.