IRFU3910PBF-VB

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估计运输时间: 7 天
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VBsemi

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$0.32 /pc
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(9999 可用)
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畅销产品
  • Product IRFU3910PBF-VB
  • Package TO251
  • Polarity Single-N
  • Technology Trench
  • VDS/VCE(V) 100V
  • VGS/VGE(±V) ±20V
  • ID/ICE (A) 1.8V
  • Vthtyp(V) 15A
  • RDS(10V) (mΩ) 110(mΩ)
  • 数量1---USD价格 0.3236
  • 数量10---USD价格 0.2966
  • 数量30---USD价格 0.2697
  • 数量100---USD价格 0.2292

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IRFU3910PBF-VB is an N-channel MOSFET in TO251 package with a drain-source withstand voltage of 100V and a drain current of 15A. It is designed to handle medium voltage and current switching applications. The gate-source withstand voltage of this MOSFET is ±20V, the gate threshold voltage is 1.8V, and it has a low turn-on voltage. At VGS=10V, its on-resistance is 110mΩ, which can provide good conduction performance at relatively low driving voltage. IRFU3910PBF-VB adopts advanced Trench technology, with lower on-resistance and higher efficiency, suitable for various power electronics applications.

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