IPP052NE7N3 G-VB is a high-performance N-channel MOSFET in TO220 package. The design of this MOSFET is optimized for high voltage and high current applications, with excellent switching performance and low on-resistance. Its maximum drain-source voltage (VDS) is 80V, suitable for high voltage power supplies and current control circuits. Due to its low RDS(ON) value, it is able to maintain low power consumption at high currents, improving the efficiency of the system.