FDC6420C-VB is a bipolar N-type and P-type MOSFET packaged in SOT23-6. Its design adopts Trench technology to provide efficient switching performance and low on-resistance. FDC6420C-VB is suitable for drain-source withstand voltage of ±20V and can operate stably at gate-source voltage of ±20V. Its N-type MOSFET has a minimum on-resistance of 22mΩ at VGS=10V, and the P-type MOSFET has an on-resistance of 55mΩ under the same conditions. The gate threshold voltage of the device is 1.0V (N-type) and -1.2V (P-type), and the maximum drain current is 5.5A (N-type) and 3.4A (P-type), respectively. These characteristics of FDC6420C-VB make it very suitable for switching applications that require high efficiency and low power consumption.