SI2308DS-T1-GE3-VB
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7 天
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- Product SI2308DS-T1-GE3-VB
- Package SOT23-3
- Polarity Single-N
- Technology Trench
- VDS/VCE(V) 60V
- VGS/VGE(±V) ±20V
-
ID/ICE (A) 1.7V - Vthtyp(V) 4A
- RDS(4.5V) (mΩ) 86(mΩ)
- RDS(10V) (mΩ) 75(mΩ)
- 数量1---USD价格 0.1618
- 数量10---USD价格 0.1483
- 数量30---USD价格 0.1348
- 数量100---USD价格 0.1146
SI2308DS-T1-GE3 is a high voltage, high current carrying capacity N-channel power MOSFET. Its main parameters include rated voltage of 60V, rated current of 4A, RDS(ON) of 75mΩ @ 10V, 86mΩ@VGS=4.5V;, 96mΩ @ 4.5V, gate-source threshold voltage range of 1V~3V, gate-source voltage range of ±±20V, and package type of SOT23-3. SI2308DS-T1-GE3 is suitable for a variety of fields and application scenarios, mainly for circuits requiring N-channel power MOSFET.Frequently Bought Products
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畅销产品-
$0.07
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$0.53
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$0.36
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$0.34
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$0.32
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$0.07
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