SI2328DS-T1-GE3-VB
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7 天
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- Product SI2328DS-T1-GE3-VB
- Package SOT23-3
- Polarity Single-N
- Technology Trench
- VDS/VCE(V) 100V
- VGS/VGE(±V) ±20V
-
ID/ICE (A) 1.5V - Vthtyp(V) 2A
- RDS(4.5V) (mΩ) 260(mΩ)
- RDS(10V) (mΩ) 240(mΩ)
- 数量1---USD价格 0.1618
- 数量10---USD价格 0.1483
- 数量30---USD价格 0.1348
- 数量100---USD价格 0.1146
SI2328DS-T1-GE3-VB is an N-channel field effect transistor (MOSFET) produced by VBsemi, suitable for a variety of electronic applications. The device has moderate current handling capability and medium voltage characteristics, suitable for circuits requiring medium power and current control.Frequently Bought Products
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畅销产品-
$0.07
-
$0.53
-
$0.36
-
$0.34
-
$0.32
-
$0.07
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