NTZD3155CT2G-VB

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VBsemi

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价格
$0.16 /pc
数量
(9999 可用)
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  • Product NTZD3155CT2G-VB
  • Package SC75-6
  • Polarity Dual-N+P
  • Technology Trench
  • VDS/VCE(V) ±20V
  • VGS/VGE(±V) ±12V
  • ID/ICE (A) 0.6/-0.3A
  • Vthtyp(V) 1.0/-1.2V
  • RDS(2.5V) (mΩ) 410/840(mΩ)
  • RDS(4.5V) (mΩ) 270/660(mΩ)
  • RDS(10V) (mΩ) (mΩ)
  • 数量1---USD价格 0.1618
  • 数量10---USD价格 0.1483
  • 数量30---USD价格 0.1348
  • 数量100---USD价格 0.1146

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NTZD3155CT2G-VB is an N+P channel bipolar field effect transistor (MOSFET) with forward and reverse current carrying capacity, low drain-source resistance, and adaptability to different gate-source voltages. These characteristics make it widely used in modules in various electronic fields.

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