VBM1606

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估计运输时间: 7 天
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VBsemi

内部产品


价格
$0.31 /pc
数量
(9999 可用)
总价
退款
Not Applicable
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  • Product VBM1606
  • Package TO220
  • Polarity Single-N
  • Technology Trench
  • VDS/VCE(V) 60V
  • VGS/VGE(±V) 20(±V)
  • ID/ICE (A) 120A
  • Vthtyp(V) 3V
  • RDS(10V) (mΩ) 5(mΩ)

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This product is a single N-channel field effect transistor, the main parameters include: - Maximum drain-source voltage (VDS): 60V - Maximum gate-source voltage (VGS): ±20V - Gate threshold voltage (Vth): 3V - Drain-source resistance at VGS=10V: 5mΩ - Maximum drain current (ID): 120A - Technical features: Adopting channel structure

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