This product is a single N-channel field effect transistor, the main parameters include:
- Maximum drain-source voltage (VDS): 60V
- Maximum gate-source voltage (VGS): ±20V
- Gate threshold voltage (Vth): 3V
- Drain-source resistance at VGS=10V: 5mΩ
- Maximum drain current (ID): 120A
- Technical features: Adopting channel structure