SI2300DS-T1-GE3-VB
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7 天
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- Product SI2300DS-T1-GE3-VB
- Package SOT23-3
- Polarity Single-N
- Technology Trench
- VDS/VCE(V) 20V
- VGS/VGE(±V) ±12V
-
ID/ICE (A) 0.5~1.5V - Vthtyp(V) 6A
- RDS(2.5V) (mΩ) 42（mΩ）
- RDS(4.5V) (mΩ) 28(mΩ)
- RDS(10V) (mΩ) (mΩ)
- Quantity 1 --- USD Price 0.05
- Quantity 10 --- USD Price 0.04
- Quantity 30 --- USD Price 0.04
- Quantity 100 --- USD Price 0.03
SI2300DS-T1-GE3 is an N-channel MOSFET suitable for medium current and low voltage.Its low threshold voltage makes it suitable for low voltage logic drive.It is commonly used in mobile devices, low voltage applications, etc.Advantages: Suitable for low voltage logic drive: The low threshold voltage characteristics are suitable for low voltage logic control.Frequently Bought Products
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畅销产品-
$0.20
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$0.07
-
$0.53
-
$0.36
-
$0.34
-
$0.23
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