SI2318DS-T1-GE3-VB
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7 天
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$0.07
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- Product SI2318DS-T1-GE3-VB
- Package SOT23-3
- Polarity Single-N
- Technology Trench
- VDS/VCE(V) 30V
- VGS/VGE(±V) ±20V
-
ID/ICE (A) 1.7V - Vthtyp(V) 6.5A
- RDS(4.5V) (mΩ) 33(mΩ)
- RDS(10V) (mΩ) 30(mΩ)
- Quantity 1 --- USD Price 0.07
- Quantity 10 --- USD Price 0.07
- Quantity 30 --- USD Price 0.06
- Quantity 100 --- USD Price 0.05
SI2318DS-T1-GE3 (VB1330) is an N-channel power MOSFET, suitable for modules in power management modules, power tools, household appliances, battery management systems, industrial control systems and communication equipment. It has low resistance and high current carrying capacity, making it suitable for circuits requiring high power and efficiency.Frequently Bought Products
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畅销产品-
$0.20
-
$0.07
-
$0.53
-
$0.36
-
$0.34
-
$0.23
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