**SUM40N10-30-GE3-VB** is a high-efficiency N-channel MOSFET in a TO263 package, suitable for applications that require higher voltage tolerance and larger current handling capabilities. It has a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 70A. This MOSFET uses **Trench technology** and has a low on-resistance (RDS(ON) = 20mΩ @ VGS = 10V), enabling it to provide stable performance in efficient current control and power conversion applications. It is widely used in power management, DC-DC converters, industrial control systems, and other high-power, high-efficiency power electronic systems.