FQP16N25-VB is an N-channel MOSFET that uses advanced trench technology and is designed for medium-to-high voltage and medium current applications. It has a drain-source voltage (VDS) of 250V and a gate-source voltage (VGS) of ±20V, supporting a maximum continuous drain current (ID) of 14A. The MOSFET has a threshold voltage (Vth) of 3.5V and an on-resistance (RDS(ON)) of 190mΩ@VGS=10V, making it an excellent performer in applications that require higher voltage handling capabilities and is suitable for a variety of industrial and power management applications.