The FDT1600N10ALZ-VB is a single N-channel MOSFET in a SOT223 package, designed for high voltage and low power applications. The MOSFET supports a drain-source voltage (VDS) of up to 100V, capable of handling high voltage applications, while having a gate-source voltage (VGS) tolerance of ±20V, suitable for a wide operating voltage range. Its gate threshold voltage (Vth) is 1.8V, ensuring that it can be turned on at a relatively low gate voltage. The on-resistance (RDS(ON)) of the FDT1600N10ALZ-VB performs well at different gate voltages: it is 120mΩ when VGS is 4.5V, and it drops to 100mΩ when VGS is 10V. Its maximum drain current (ID) is 5A, enabling it to handle medium current loads. FDT1600N10ALZ-VB adopts trench technology, which provides lower switching loss and higher current control capability, and is very suitable for various power management and load switching applications.